Enhancement Mode Antimonide Quantum Well MOSFETs with High Electron Mobility and GHz Small-Signal Switching Performance
نویسنده
چکیده
This paper demonstrates, for the first time, enhancement mode antimonide MOSFETs by integrating a composite highgate stack (3nm Al2O3-1nm GaSb) with ultrathin InAs0.7Sb0.3 QW (7.5nm). The MOSFET exhibits record high electron drift mobility of 5200 cm2/Vs at a carrier density (Ns) of 1.8x1012cm-2, sub-threshold slope of 150mV/decade, ION-IOFF ratio of ~4000x within a voltage window of ~1V, high ION of 40μA/μm at VDS of 0.5V for 5μm gate length (LG) device. The device exhibits excellent pinch-off in the output characteristics with no evidence of impact ionization enabled by enhanced quantization and e-mode operation. RF characterization allows extraction of the intrinsic device metrics (Cgs, Cgd, gm, gds, veff, and ft) and the parasitic resistive and capacitive elements limiting the short channel device performance.
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